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FDB2570 - N-Channel MOSFET

Key Features

  • 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain c.

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Full PDF Text Transcription for FDB2570 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDB2570. For precise diagrams, and layout, please refer to the original PDF.

SMD Type MOSFET 150V N-Channel PowerTrench MOSFET KDB2570(FDB2570) Features 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 V Low gate charge Fast switc...

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0 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.

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Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDB2570 N-Channel MOSFET Fairchild Semiconductor

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