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Kexin

IRLML0060 Datasheet Preview

IRLML0060 Datasheet

N-Channel MOSFET

No Preview Available !

SMD Type
Features
VDS (V) = 60V
RDS(ON) 92mΩ (VGS = 10V)
RDS(ON) 116mΩ (VGS = 4.5V)
TraMnOsiSsFtoErsT
N-Channel MOSFET
IRLML0060
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
Unit: mm
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance. Junction- to-Ambient *1
Thermal Resistance. Junction- to-Ambient (t<10s)
Junction Temperature
Storage Temperature Range
*1: Surface mounted on 1 in square Cu board.
TA=25
TA=70
TA=25
TA=70
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
Rating
60
±16
2.7
2.1
11
1.25
0.8
100
99
150
-55 to 150
Unit
V
A
W
/W
www.kexin.com.cn 1




Kexin

IRLML0060 Datasheet Preview

IRLML0060 Datasheet

N-Channel MOSFET

No Preview Available !

SMD Type
N-Channel MOSFET
IRLML0060
Electrical Characteristics (TJ = 25unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
Test Conditions
ID=250μA, VGS=0V
VDS=60V, VGS=0V
VDS=60V, VGS=0V, TJ=125
VDS=0V, VGS=±16V
VDS=VGS , ID=25μA
VGS=4.5V, ID=2.2A *2
VGS=10V, ID=2.7A *2
VDS=25V, ID=2.7A
VGS=0V, VDS=25V, f=1MHz
VGS=4.5V, VDS=30V, ID=2.7A *2
VGS=4.5V, VDD=30V,
ID = 1.0A, RG=6.8Ω*2
VR = 30V, IF= 1.6A,
dI/dt= 100A/μs *2
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current *1
IS MOSFET symbol
showing the
integral reverse
ISM p-n junction diode.
Diode Forward Voltage
VSD IS=2.7A,VGS=0V *2
*1: Repetitive rating; pulse width limited by max. junction temperature.
*2: Pulse width 400µs; duty cycle 2%.
TraMnOsiSstFoErsT
Min Typ Max Unit
60 V
20 μA
250
±100 nA
1.0 2.5 V
116
mΩ
92
7.6 S
290
37 pF
21
1.6 Ω
2.6
0.7 nC
1.3
5.4
6.3
6.8 ns
4.2
21
20 nC
1.6
A
11
1.3 V
Marking
Marking
1L**
2 www.kexin.com.cn


Part Number IRLML0060
Description N-Channel MOSFET
Maker Kexin
Total Page 7 Pages
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