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KC808-25 - PNP Silicon AF Transistors

This page provides the datasheet information for the KC808-25, a member of the KC808-16 PNP Silicon AF Transistors family.

Datasheet Summary

Features

  • High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating -30 -25 -5 -800 310 150 -65 to.

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Datasheet preview – KC808-25

Datasheet Details

Part number KC808-25
Manufacturer Kexin
File Size 57.50 KB
Description PNP Silicon AF Transistors
Datasheet download datasheet KC808-25 Datasheet
Additional preview pages of the KC808-25 datasheet.

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Full PDF Text Transcription

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SMD Type www.DataSheet4U.com Transistors PNP Silicon AF Transistors KC808(BC808) Features High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating -30 -25 -5 -800 310 150 -65 to +150 Unit V V V mA mW 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.
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