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KC808-40 - PNP Silicon AF Transistors

Download the KC808-40 datasheet PDF. This datasheet also covers the KC808-16 variant, as both devices belong to the same pnp silicon af transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating -30 -25 -5 -800 310 150 -65 to.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KC808-16-Kexin.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
KC808 PNP Silicon AF Transistors Guangdong Kexin Industrial
KC808A PNP Silicon AF Transistors Guangdong Kexin Industrial
KC80 HIGH EFFICIENCY MULTICRYSTAL PHOTOVOLTAIC MODULE Kyocera
KC807 PNP Silicon AF Transistors Guangdong Kexin Industrial
KC807A PNP Silicon AF Transistors Guangdong Kexin Industrial

Other Datasheets by Kexin Semiconductor

Part Number Description
KC808-16 PNP Silicon AF Transistors
KC808-25 PNP Silicon AF Transistors
KC808A-16 PNP Silicon AF Transistors
KC808A-25 PNP Silicon AF Transistors
KC808A-40 PNP Silicon AF Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type www.DataSheet4U.com Transistors PNP Silicon AF Transistors KC808(BC808) Features High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating -30 -25 -5 -800 310 150 -65 to +150 Unit V V V mA mW 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.