High current gain Low collector-emitter saturation voltage
SOT-363
1.3+0.1 -0.1 0.65
Unit: mm
0.525
+0.11.25 -0.1
+0.152.3 -0.15
0.36
0.3+0.1 -0.1
2.1+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation
Derate above 25 Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range
Symbol VCBO VCEO VEBO IC
PD
R JA TJ, Tstg
Rating 50 45 6.0 100 300 2.
Full PDF Text Transcription for KC847S (Reference)
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KC847S. For precise diagrams, and layout, please refer to the original PDF.
SMD Type Transistors NPN Multi-Chip General Purpose Amplifier KC847S(BC847S) Features High current gain Low collector-emitter saturation voltage SOT-363 1.3+0.1 -0.1 0.65...
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ain Low collector-emitter saturation voltage SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.11.25 -0.1 +0.152.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation Derate above 25 Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC PD R JA TJ, Tstg Rating 50 45 6.0 100 300 2.4 415 -55 to +150 Unit V V V mA mW mW/ /W +0.050.95 -0.05 0.1max 0.1+0.05 -0.
KC847S Datasheet
