KDB5690 - N-Channel MOSFET

Kexin

Datasheet Details

32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V RDS(ON) = 0.032 @ VGS = 6 V Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175 maximum junction temperature rating. +5 .2 8 0.2 -0.2 +8 .7 0.2 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 1.27+0.1 -0.1 0.1max 2.54 5.08+.

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Published: May 23, 2016 |