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KTC3551T - NPN Transistors

Features

  • s.
  • Adoption of MBIT Processes.
  • Large Current Capacitance.
  • Low Collector-to-Emitter Saturation Voltage.
  • High-Speed Switching.
  • High Allowable Power Dis sipation.
  • Complementary to KTA1551T. +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Co.

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SMD Type Transistors NPN Transistors KTC3551T ■ Features ● Adoption of MBIT Processes. ● Large Current Capacitance. ● Low Collector-to-Emitter Saturation Voltage. ● High-Speed Switching. ● High Allowable Power Dis sipation. ● Complementary to KTA1551T. +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC ICP PC TJ Tstg Rating 80 80 50 5 1 3 0.
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