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SB320 - Schottky Diodes

Key Features

  • s.
  • Metal-Semiconductor junction with guard ring.
  • Epitaxial construction.
  • Low forward voltage drop.
  • High current capability.
  • The plastic material carries UL recognition 94V-0 DO-27 (DO-201AD) 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. Dimensions in inches and (millimeters).
  • Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage RMS Voltage Maximum DC Blocking Voltage.

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Full PDF Text Transcription for SB320 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SB320. For precise diagrams, and layout, please refer to the original PDF.

DIP Type Schottky Diodes SB320 ~ SB3200 Diodes ■ Features ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High curren...

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ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 DO-27 (DO-201AD) 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. Dimensions in inches and (millimeters) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage RMS Voltage Maximum DC Blocking Voltage Forward Voltage @ 3A Averaged Forward Current Peak Forward Surge Current @ 8.3ms Maximum DC Reverse Current Ta=25℃ Ta=100℃ Typical Junction Capacitance Thermal Resistance.Junction- to-Ambient Thermal Resis