• Part: SI4558DY
  • Description: Complementary Power Trench MOSFET
  • Category: MOSFET
  • Manufacturer: Kexin Semiconductor
  • Size: 1.47 MB
Download SI4558DY Datasheet PDF
Kexin Semiconductor
SI4558DY
Features - N-Channel:VDS=30V ID=6A - RDS(ON) < 40mΩ (VGS = 10V) - RDS(ON) < 60mΩ (VGS = 4.5V) - P-Channel:VDS=-30V ID=-6A - RDS(ON) < 40mΩ (VGS =-10V) - RDS(ON) < 70mΩ (VGS =-4.5V) SOP-8 +0.040.21 -0.02 1.50 0.15 1 Source1 2 Gate1 3 Source2 4 Gate2 5 Drain 6 Drain 7 Drain 8 Drain S2 S1 - Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @ TJ=150℃ (Note.1) Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient (Note.1) Junction Temperature Storage Temperature Range Ta = 25 ℃ Ta = 70 ℃ Ta = 25 ℃ Ta = 70 ℃ Note.1:Surface Mounted on FR4 Board, t ≤ 10 sec. G2 G1 Symbol VDS VGS Rth JA TJ Tstg N-Channel P-Channel 30 -30 ±20 6 -6 4.7 -4.7 30 -30 2.4 1.5 52 150 -55 to 150 Unit V W ℃/W ℃ - Marking Marking 4558 KA- - - - .kexin..cn...