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SI4558DY - Complementary Power Trench MOSFET

Key Features

  • s.
  • N-Channel：VDS=30V ID=6A.
  • RDS(ON) ＜ 40mΩ (VGS = 10V).
  • RDS(ON) ＜ 60mΩ (VGS = 4.5V).
  • P-Channel：VDS=-30V ID=-6A.
  • RDS(ON) ＜ 40mΩ (VGS =-10V).
  • RDS(ON) ＜ 70mΩ (VGS =-4.5V) SOP-8 +0.040.21 -0.02 1.50 0.15 1 Source1 2 Gate1 3 Source2 4 Gate2 5 Drain 6 Drain 7 Drain 8 Drain D S2 S1.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @ TJ=150℃ (Note.1) Pulsed Drain Current Power Dissipation Therma.

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SMD Type Complementary Power Trench MOSFET SI4558DY (KI4558DY) MOSFET ■ Features ● N-Channel：VDS=30V ID=6A ● RDS(ON) ＜ 40mΩ (VGS = 10V) ● RDS(ON) ＜ 60mΩ (VGS = 4.5V) ● P-Channel：VDS=-30V ID=-6A ● RDS(ON) ＜ 40mΩ (VGS =-10V) ● RDS(ON) ＜ 70mΩ (VGS =-4.5V) SOP-8 +0.040.21 -0.02 1.50 0.15 1 Source1 2 Gate1 3 Source2 4 Gate2 5 Drain 6 Drain 7 Drain 8 Drain D S2 S1 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @ TJ=150℃ (Note.1) Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient (Note.1) Junction Temperature Storage Temperature Range Ta = 25 ℃ Ta = 70 ℃ Ta = 25 ℃ Ta = 70 ℃ Note.1:Surface Mounted on FR4 Board, t ≤ 10 sec.