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SI4558DY Datasheet Preview

SI4558DY Datasheet

Complementary Power Trench MOSFET

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SMD Type
Complementary Power Trench MOSFET
SI4558DY (KI4558DY)
MOSFET
Features
N-ChannelVDS=30V ID=6A
RDS(ON) 40mΩ (VGS = 10V)
RDS(ON) 60mΩ (VGS = 4.5V)
P-ChannelVDS=-30V ID=-6A
RDS(ON) 40mΩ (VGS =-10V)
RDS(ON) 70mΩ (VGS =-4.5V)
SOP-8
1.50 0.15
1 Source1
2 Gate1
3 Source2
4 Gate2
5 Drain
6 Drain
7 Drain
8 Drain
D
S2 S1
Absolute Maximum Ratings Ta = 25
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current @ TJ=150(Note.1)
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient (Note.1)
Junction Temperature
Storage Temperature Range
Ta = 25
Ta = 70
Ta = 25
Ta = 70
Note.1:Surface Mounted on FR4 Board, t 10 sec.
G2 G1
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
N-Channel P-Channel
30 -30
±20
6 -6
4.7 -4.7
30 -30
2.4
1.5
52
150
-55 to 150
Unit
V
A
W
/W
Marking
Marking
4558
KA****
www.kexin.com.cn 1




Kexin

SI4558DY Datasheet Preview

SI4558DY Datasheet

Complementary Power Trench MOSFET

No Preview Available !

SMD Type
MOSFET
Complementary Power Trench MOSFET
SI4558DY (KI4558DY)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Symbol
VDSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
(Note.1)
RDS(On)
On-State drain Current (Note.1)
ID(On)
Forward Transconductance (Note.1)
gFS
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
Turn-On DelayTime
td(on)
Turn-On Rise Time
tr
Turn-Off DelayTime
td(off)
Turn-Off Fall Time
tf
Body Diode Reverse Recovery Time
trr
Maximum Body-Diode Continuous Current IS
Diode Forward Voltage (Note.1)
VSD
Test Conditions
ID=250μA, VGS=0V
ID=-250μA, VGS=0V
VDS=30V, VGS=0V
VDS=-30V, VGS=0V
VDS=24V, VGS=0V,TJ=70
VDS=-24V, VGS=0V,TJ=70
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VDS=VGS, ID=-250μA
VGS=10V, ID=6A
VGS=4.5V, ID=4.8A
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4.4A
VDS=5V, VGS=10V
VDS=-5V, VGS=-10V
VDS=5V, VGS=4.5V
VDS=-5V, VGS=-4.5V
VDS=15V, ID=6A
VDS=-15V, ID=-6A
N-Channel:
VGS=10V, VDS=15V, ID=6A
P-Channel:
VGS=-10V, VDS=-15V, ID=-6A
N-Channel:
VGS=10V, VDS=15V, ID=1A, RG=6Ω
RL=15Ω
P-Channel:
VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω
RL=15Ω
IF=2A, dI/dt=100A/μs
IF=-2A, dI/dt=100A/μs
IS=2A,VGS=0V
IS=-2A,VGS=0V
Type Min
N-CH 30
P-CH -30
N-CH
P-CH
N-CH
P-CH
N-CH 1
P-CH -1
N-CH
P-CH
N-CH 30
P-CH -30
N-CH 8
P-CH -8
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
Typ Max Unit
V
1
-1 μA
5
-5
±100 nA
V
32 40
45 60
mΩ
32 40
56 70
A
13
10.6
16
22
3.4
5.4
2.3
3.6
12
12
12
12
27
38
24
25
45
50
0.77
-0.77
30
35
25
25
25
25
55
55
50
50
80
80
2
-2
1.2
-1.2
S
nC
ns
A
V
Note.1: Pulse test; pulse width 300 us, duty cycle 2%.
2 www.kexin.com.cn


Part Number SI4558DY
Description Complementary Power Trench MOSFET
Maker Kexin
Total Page 6 Pages
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