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AP1608P1C-P22 - Phototransistor

Description

z Made with silicon phototransistor chips

Features

  • z 1.6 mm x 0.8 mm SMD LED, 1.1 mm thickness z Mechanically and spectrally matched to infrared emitting LED lamp z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant.

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Datasheet Details

Part number AP1608P1C-P22
Manufacturer Kingbright
File Size 444.04 KB
Description Phototransistor
Datasheet download datasheet AP1608P1C-P22 Datasheet

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Full PDF Text Transcription

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AP1608P1C-P22 1.6 x 0.8 mm Phototransistor DESCRIPTION z Made with silicon phototransistor chips FEATURES z 1.6 mm x 0.8 mm SMD LED, 1.1 mm thickness z Mechanically and spectrally matched to infrared emitting LED lamp z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology PACKAGE DIMENSIONS Confidential RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) ABSOLUTE MAXIMUM RATINGS at TA=25°C Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4.
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