L53SF4BT - T-1 3/4(5mm) in ra-red emitting diode

Description

F3 Made with Gallium Arsenide Infrared Emitting diodes.

SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes.

TO THE L51P3C PHOTOTRANSISTOR.

Features

Kingbright

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Datasheet Details

Part number	L53SF4BT
Manufacturer	Kingbright
File Size	125.59 KB
Description	T-1 3/4(5mm) in ra-red emitting diode
Datasheet	L53SF4BT Datasheet
Additional preview pages of the L53SF4BT datasheet.

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Full PDF Text Transcription

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T-1 3/4 (5mm) INFRA-RED EMITTING DIODES www.DataSheet4U.com L53F3C L53SF4C L53F3BT L53SF4BT Features !MECHANICALLY AND SPECTRALLY MATCHED Description F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. TO THE L51P3C PHOTOTRANSISTOR. !BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE HIGH POWER OUTPUT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO:CDA0543 APPROVED: J.LU REV NO: V.1 CHECKED: DATE: OCT/29/2001 DRAWN:X.Q.ZHENG PAGE: 1 OF 4 www.DataSheet4U.com Selection Guide Po (m W/s r ) @20m A Min .

Published: Jul 24, 2010 |