CS7N60 datasheet by Kymmene Electronics.
| Part number | CS7N60 |
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| Datasheet | CS7N60-KymmeneElectronics.pdf |
| File Size | 56.53 KB |
| Manufacturer | Kymmene Electronics |
| Description | VDMOS type field effect transistor |
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汇川电子 CS7N60 型 VDMOS 场效应晶体管 用途：主要用于电源适配器、充电器等线性放大和功率开关电路。 特点：开关速度快，通态电阻低，驱动电路简单等。封装形式为TO-220/TO-220F。 最大额定值 除非另有规定，除非另有规定，Tc= 25℃ 参数名称 符号 额定值 单位 漏源反向电压 VDSS 600 V 连续漏极电流 ID 7A 脉冲漏极电流 IDM 28 A 栅源电压 VGS ±30 V 最大耗散功率 结温 贮存温度 TO-220 PD TO-220F Tj Tstg 110 40 150.
View CS7N60A3R datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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CS7N60A3R | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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CS7N60A4R | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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CS7N60A7HD | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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CS7N60A8HD | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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CS7N60A8R | Silicon N-Channel Power MOSFET | CR Micro |
View all Kymmene Electronics datasheets
| Part Number | Description |
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