* Hall effect measuring principle
* Galvanic isolation between primary
* and secondary circuit Isolation voltage 3000 V Low power consumption Extended measuring range( 3 x IPN) Insulated plastic case recognized according to UL 94-V0 www.DataShee
HAT200-S Datasheet (395.50 KB)
HAT200-S
LEM
395.50 KB
(hat200-s - hat1500-s) current transducer.
Current Transducer HAT 200..1500-S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary ci.
📁 Related Datasheet
HAT2016R Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
HAT2016R Silicon N-Channel Power MOSFET (Renesas)
HAT2016R Dual N-Channel 30V MOSFET (VBsemi)
HAT2019R Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
HAT2020R Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
HAT2020R Silicon N-Channel Power MOSFET (Renesas)
HAT2022R Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
HAT2022R Silicon N-Channel Power MOSFET (Renesas)
HAT2024R Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
HAT2024R Silicon N-Channel Power MOSFET (Renesas)
