DB151S-DB157S
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
Features
Rating to 1000V PRV
Surge overload rating to 30 Amperes peak
Glass passivated chip junctions
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plastic material has UL flammability classification
94V-O
Polarity symbols molded on body
Weight: 0.016 ounces,0.45 grams
1± 0.1
8.3± 0.1
5± 0.2
DB-S
7.9± 0.2
6.4± 0.1
1.2± 0.3
10± 0.6
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
DB
151S
DB
152S
DB
153S
DB
154S
DB
155S
DB
156S
DB
157S
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current @TA=25
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.5 A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
Operating junction temperature range
Storage temperature range
VRRM
VRMS
VDC
IF(AV)
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
100 200 400 600 800 1000
1.5
V
V
V
A
IFSM
40
A
VF
IR
TJ
TSTG
1.1
10.0
1.0
- 55 ---- + 150
- 55 ---- + 150
V
μA
mA
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