Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection.
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SB320. For precise diagrams, and layout, please refer to the original PDF.
SB320-SB370 Schottky Barrier Rectifier Features Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High sur...
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al construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0 VOLTAGE RANGE: 20 --- 70 V CURRENT: 3.0 A DO - 27 Mechanical Data Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Si
SB320 Datasheet
