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GM76C8128CL - CMOS Static RAM

General Description

The GM76C8128CL/CLL-W is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits.

Using a 0.6um advanced CMOS technology and operated from a single 2.7V to 5.5V supply.

Advanced circuit technique provide both high speed and low power consumption.

Key Features

  • Fast Speed : 55/70ns at Vcc=5V+/-10% 120/150ns at Vcc=3V+/-10%.
  • Low Power Standby and Low Power Operation -Standby : 0.11mW Max. at Vcc=5V+/-10% 49.5uW Max. at Vcc=3V+/-10% -Operation : 385mW Max. at Vcc=5V+/-10% DataSheet4U. com 66mW Max. at Vcc=3V+/10%.
  • Completely Static RAM : No Clock or Timing Strobe Required.
  • Equal Access and Cycle Time.
  • TTL compatible inputs and outputs.
  • Capability of Battery Back-up Operation.
  • Single +2.7V ~ +5.5V Operation A0.
  • Stan.

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Other Datasheets by LG Electronics

Part Number Description
GM76C8128CLL CMOS Static RAM
GM76C8128CLL-W CMOS Static RAM
GM76C8128A CMOS Static RAM
GM76C8128AL CMOS Static RAM
GM76C8128ALL CMOS Static RAM

Full PDF Text Transcription (Reference)

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www.DataSheet4U.com LG Semicon Co.,Ltd. Description The GM76C8128CL/CLL-W is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.6um advanced CMOS technology and operated from a single 2.7V to 5.5V supply. Advanced circuit technique provide both high speed and low power consumption. The device is placed in a low power standby mode with /CS1 high or CS2 low and the output enable (/OE) allows fast memory access. Thus it is suitable for high speed and low power applications, especially where battery back-up is required.