Datasheet Details
| Part number | LSK389 |
|---|---|
| Manufacturer | LINEAR SYSTEMS |
| File Size | 718.52 KB |
| Description | Ultra Low Noise Monolithic Dual N-Channel JFET Amplifier |
| Datasheet |
 LSK389 Datasheet
|
|
|
General Description
The LSK389 Series, Monolithic Dual N-Channel JFETs were specifically designed to provide users a better performing, less time consuming and cheaper solution for obtaining tighter IDSS matching, and better thermal tracking, than matching individual JFETs.
Key Features
- Ultra Low Noise: en = 1.9nV/√Hz (typ), f = 1kHz and NBW = 1Hz.
- Tight Matching: IVGS1-2I = 20mV max.
- High Breakdown Voltage: BVGSS = 40V max.
- High Gain: Gfs = 20mS (typ).
- Low Capacitance: 25pF typ.
- Improved Second Source Replacement for 2SK389 Benefits.
- Unique Monolithic Dual Design Construction of Interleaving Both JFETs on the Same Piece of Silicon.
- Excellent Matching and Thermal Tracking.
- Great for Maximizing Battery Operated.
