Datasheet Summary
LGD8209TI LGD8209TI 410 V, 12 A N-Channel Ignition IGBT
Agency Approvals and Environmental
Environmental Approvals
Pinout Diagram
Ignition IGBT Datasheet
Product Summary
Characteristic VCES IC
Value 410 12
Unit V A
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) Features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
- Ideal for Coil-on-Plug Applications
- DPAK Package Offers Smaller Footprint and
Increased Board Space
- Gate-Emitter ESD Protection
-...