LSE60R092GF mosfet equivalent, n-channel power mosfet.
* Ultra low RDS(on)
* Ultra low gate charge (typ. Qg = 66nC)
* 100% UIS tested
* RoHS compliant
Applications
* Power faction correction (PFC).
* S.
which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max RDS(on),max
650V 0.092Ω.
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