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LRC

L2N7002KLT1G Datasheet Preview

L2N7002KLT1G Datasheet

Small Signal MOSFET

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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
L2N7002KLT1G
380 mAmps, 60 Volts N–Channel SOT–23 S-L2N7002KLT1G
FEATURES
1)ESD Protected
2)Low RDS(on)
3)Surface Mount Package
4)This is a Pb−Free Device
5)We declare that the material of product compliant with
RoHS requirements and Halogen Free.
6) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
APPLICATIONS
1)Low Side Load Switch
2)Level Shift Circuits
3)DC−DC Converter
4)Portable Applications i.e. DSC, PDA, Cell Phone, etc.
3
1
2
SOT–23
V(BR)DSS
60 V
RDS(on) MAX
2.3 W @ 10 V
2.7 W @ 5.0 V
ID MAX
(Note 1)
380 mA
DEVICE MARKING AND ORDERING INFORMATION
Device
L2N7002KLT1G
Marking
RK
Shipping
3000/Tape&Reel
MAXIMUM RATINGS(Tj= 25unless otherwise stated))
Rating
Drain−to−Source Voltage
Symbol
VDSS
Value
60
Unit
Vdc
Gate−to−Source Voltage
VGS ±20
Vdc
Drain Current
ID mAdc
– Steady State
TA = 25°C
320
TA = 85°C
230
–t<5s
TA = 25°C
380
TA = 85°C
270
Power Dissipation (Note 1)
Steady State
PD
300
mW
t<5s
420
Pulsed Drain Current (tp = 10 µs) IDM
sO)perating Junction and Storage TJ, TSTG
Temperature Range
1.5
−55 to
+150
A
°C
Source Current (Body Diode)
IS 300
mA
Simplified Schematic
Gate 1
3 Drain
Source 2
(Top View)
Lead Temperature for Soldering
Purposes (1/8 " from case for 10
TL
260
°C
s)
Gate−Source ESD Rating
ESD
2000
V
(HBM, Method 3015)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
May,2015
Rev.E 1/5




LRC

L2N7002KLT1G Datasheet Preview

L2N7002KLT1G Datasheet

Small Signal MOSFET

No Preview Available !

LESHAN RADIO COMPANY, LTD.
L2N7002KLT1G,S-L2N7002KLT1G
THERMAL CHARACTERISTICS
Characteristic
Junction−to−Ambient − Steady
JSutantceti(oNnotteo−1A) mbient − t 5 s
(Note 1)
Max
RθJA
RθJA
Value
417
300
Unit
/W
ELECTRICAL CHARACTERISTICS (Ta= 25)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
OFF CHARACTERISTICS
DraintoSource Breakdown
Voltage
V(BR)DSS VGS = 0 V, ID = 250 µA
DraintoSource Breakdown
V(BR)DSS/TJ
Voltage Temperature Coefficient
60
71
V
mV/C
Zero Gate Voltage Drain Current
VGS = 0 V, TJ = 25C
IDSS VDS = 60 V TJ = 125C
VGS = 0 V,
VDS = 50 V
TJ = 25C
1
µA
500
100 nA
GatetoSource Leakage Current IGSS
ON CHARACTERISTICS (Note 2.)
VDS = 0 V, VGS = 20 V
10 µA
Gate Threshold Voltage
VGS(TH) VGS = VDS, ID = 250 µA 1
2.5 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
4 mV/C
Drain−to−Source On Resistance RDS(on)
Forward Transconductance
Gfs
CHARGES AND CAPACITANCES
VGS = 10 V, ID = 500 mA
VGS = 5.0 V, ID = 50 mA
VDS = 5 V, ID = 200 mA
80
2.3 Ω
2.7
mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1 MHz, VDS
= 25 V
Total Gate Charge
QG(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
QG(TH)
QGS
QGD
VGS = 4.5 V, VDS = 10 V;
ID = 500 mA
SWITCHING CHARACTERISTICS (VGS = V (Note 3)
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VDS = 10 V, VGEN = 10 V,
ID = 500 mA
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 115
2. Pulse Test: pulse width 300 s, duty cycle 2% mA
TJ = 25C
TJ = 85C
3. Switching characteristics are independent of operating junction temperatures
34
3 pF
2.2
0.71
0.1
0.32
nC
0.16
3.8
3.4 ns
19
12
1.4
0.7
V
May,2015
Rev.E 2/5


Part Number L2N7002KLT1G
Description Small Signal MOSFET
Maker LRC
Total Page 5 Pages
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