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L8550. For precise diagrams, tables, and layout, please refer to the original PDF.
LESHAN RADIO COMPANY, LTD. TO-92 Plastic-Encapsulate Transistors L8550 FEATURES Power dissipation PCM : 1 A 3. COLLECTOR TRANSISTOR˄ PNP ˅ TO ü 92 W ˄Tamb=25ć˅ 1.EMITTER ...
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M : 1 A 3. COLLECTOR TRANSISTOR˄ PNP ˅ TO ü 92 W ˄Tamb=25ć˅ 1.EMITTER Collector current ICM: -1.5 Collector-base voltage 2. BASE V(BR)CBO :- 40 V Operating and storage junction temperature range TJ ˈT stg: -55ć to +150ć ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current 1 2 3 ˄ Tamb=25ć Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE˄1˅ unless Test otherwise MIN -40 -25 -5 specified TYP ˅ MAX UNIT V V V -0.1 -0.1 -0.1 A A A conditions IE=0 IB=0 IC=0