LDTC143EET1G Datasheet | LRC

LESHAN RADIO PANY, LTD. Bias Resistor Transistors LDTC114EET1G Series NPN Silicon Surface Mount Transistors S-LDTC114EET1G Series with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual ponents by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications. - Simplifies Circuit Design - Reduces Board Space - Reduces ponent Count - The SC-89 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. - We declare that the material of product pliance with Ro HS requirements. - S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SC-89 PIN 1 BASE (INPUT) R1 R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Collector Current IC 100 THERMAL CHARACTERISTICS Unit Vdc Vdc m Adc Rating Total Device Dissipation, FR- 4 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction- to- Ambient (Note...