LN2306LT1G mosfet equivalent, 30v n-channel enhancement-mode mosfet.
1)VDS= 30V 2)RDS(ON), Vgs@10V, [email protected] = 38m Ω 3)RDS(ON), [email protected], [email protected] = 43m Ω 4)RDS(ON), [email protected], [email protected] = 62m Ω
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1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the materi.
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