LN2312LT3G Description
20V N-Channel Enhancement-Mode MOSFET APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product pliant with RoHS requirements and Halogen Free.
LN2312LT3G Key Features
- DEVICE MARKING AND ORDERING INFORMATION
- MAXIMUM RATINGS(Ta = 25℃)
- THERMAL DATA
- ELECTRICAL CHARACTERISTICS (Ta= 25℃) STATIC
- DYNAMIC
- V VGS = 0 V, ID = 250 μA 1 V VGS = VDS, ID = 250 μA
- 1 μA VDS=20V, VGS=0V
- S VDS = 10 V, ID = 5 A
- pF VGS = 0 V, f = 1.0 MHz
- VDS= 8 V