* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device LP2307LT1G 3 1 2 SOT
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LP2307LT3G Datasheet (278.26 KB)
LP2307LT3G
LRC
278.26 KB
16v p-channel enhancement-mode mosfet.
LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS(ON), Vgs@-4.5V, Ids@-4.7A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 100 .
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