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MV2115 Datasheet Preview

MV2115 Datasheet

(MV2101 - MV2115) Silicon Tuning Diode

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MV2115 pdf
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LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACKAGE for
high volumerequirements of FM Radio and TV tuning and AFC, general
frequency control andtuning applications.They provide solid–state reliability
in replacement of mechanical tuning methods. Also available in Surface
Mount Package up to 33pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance 10%
Complete Typical Design Curves
3
CATHODE
1
ANODE
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2106 MV2108
MV2109 MV2111
MV2115
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318–08, STYLE 8
MAXIMUM RATINGS(EACH DIODE)
SOT– 23 (TO–236AB)
Rating
Symbol MV21XX MMBV21XXLT1 Unit
Reverse Voltage
Forward Current
Forward power Dissipation @T A = 25°C
Derate above 25°C
VR
IF
PD
30
200
280 225
2.8 1.8
Vdc
mAdc
mW
mW/°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
TJ
+150
°C
T stg –55 to +150 °C
MMBV2101LT1=M4G MMBV2107LT1=4W
MMBV2103LT1=4H
MMBV2108LT1=4X
MMBV2105LT1=4U
MMBV2109LT1=4J
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Symbol Min Typ
Max
Unit
Reverse Breakdown Voltage
(IR=1.0µAdc)
Reverse Voltage Leakage Current
(VR=25Vdc,TA=25°C)
Diode Capacitance Temperature Coefficient
(VR=4.0Vdc,f=1.0MHz)
V (BR)R
IR
TCC
30 —
——
— 280
— Vdc
0.1 µAdc
— ppm/°C
MMBV2101~MMBV2109 –1/3
MV2101~MV2115



LRC
LRC

MV2115 Datasheet Preview

MV2115 Datasheet

(MV2101 - MV2115) Silicon Tuning Diode

No Preview Available !

MV2115 pdf
LESHAN RADIO COMPANY, LTD.
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115
Device
MMBV2101LT1/MV2101
MMBV2103LT1
MV2104
MMBV2105LT1/MV2105
MMBV2107LT1
MMBV2108LT1/MV2108
MMBV2109LT1/MV2109
MV2111
MV2115
C T , Diode Capacitance
V R = 4.0 Vdc, f = 1.0 MHz
pF
Min
6.1
9.0
10.8
13.5
19.8
24.3
29.7
42.3
90
Nom
6.8
10
12
15
22
27
33
47
100
Max
7.5
11
13.2
16.5
24.2
29.7
36.3
51.7
110
Q, Figure of Merit
V R = 4.0 Vdc,
f = 50 MHz
Typ
450
400
400
400
350
300
200
150
100
T R, Tuning Ratio
C 2 /C 30
f = 1.0 MHz
Min Typ Max
2.5 2.7 3.2
2.5 2.9 3.2
2.5 2.9 3.2
2.5 2.9 3.2
2.5 2.9 3.2
2.5 3.0 3.2
2.5 3.0 3.2
2.5 3.0 3.2
2.6 3.0 3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk.
Use the device title and drop the “T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. C T , DIODE CAPACITANCE
(C T = C C + C J ). C T is measured at 1.0 MHz using a
ca-pacitance bridge (Boonton Electronics Model
75A or equivalent).
2. T R, TUNING RATIO
T R is the ratio of C T measured at 2.0 Vdc divided by
C T measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
ad-mittance bridge at the specified frequency and
substitut-ing in the following equations:
Q=
2πfC
G
(Booton Electronics Model 33As8 or equivalent).Use
Lead Length ~~1/16”.
4.T CC,DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR=4.0Vdc,f=1.0MHz,
TA= – 65°C with CT at VR=4.0Vdc,f=1.0MHz,TA= +85°C in the
following equation,which defines TC C:
TC C =
CT(+85°C) – CT(–65°C ) . 106
85+65
C T(25°C)
Accuracy limited by measurement of CT to±0.1pF.
MMBV2101~MMBV2109 –2/3
MV2101~MV2115


Part Number MV2115
Description (MV2101 - MV2115) Silicon Tuning Diode
Maker LRC
Total Page 3 Pages
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