S-L2N7002FDW1T1G mosfet equivalent, small signal mosfet.
* RDS(ON) ≦8Ω@VGS=4V
* RDS(ON) ≦13Ω@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current.
Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
FEATURES
* RDS(ON) ≦8Ω@.
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