Datasheet Summary
LUP12N65 / LUF12N65
650V N-Channel Enhancement Mode MOSFET
Product General Description
These enhancement mode power filed effect transistors havebeen advanced technology design to provide low on-state resistance, high avalanche energy. These devices are well suited for popular AC-DC applications, active power factor correction, ballasts based on half-bridge topology.
Features
12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A
- Low On-state Resistance
- Fast Switching
- Low Gate Charge
- Fully Characterized Avalanche Voltage and Current
Marking and Order Information
TYPE LUP12N65 LUF12N65
MARKING P12N65 F12N65
PACKAGE TO-220 TO-220F
PACKING 50PCS/TUBE...