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LUP12N65 Datasheet Preview

LUP12N65 Datasheet

650V N-Channel Enhancement Mode MOSFET

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LUP12N65 / LUF12N65
650V N-Channel Enhancement Mode MOSFET
Product General Description
These enhancement mode power filed effect
transistors havebeen advanced technology
design to provide low on-state resistance,
high avalanche energy. These devices are well
suited for popular AC-DC applications, active
power factor correction, ballasts based on
half-bridge topology.
Features
12A , 650V, RDS(ON)=0.8@VGS=10V, ID=6.0A
• Low On-state Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
Marking and Order Information
TYPE
LUP12N65
LUF12N65
MARKING
P12N65
F12N65
PACKAGE
TO-220
TO-220F
PACKING
50PCS/TUBE
50PCS/TUBE
Absolute Maximum Ratings and Thermal Characteristics (TC=25OC unless otherwise noted )
Parameter
Symbol ULP12N65 ULF12N65 Units
Drain-Source Voltage
VDS 650 V
Gate-Source Voltage
VGS +30 V
Continuous Drain Current
ID 12 12 A
Pulsed Drain Current 1)
Avalanche Energy with Single Pulse
IAS=12A, VDD=90V, L=12mΗ
Maximum Power Dissipation
Derating Factor
Operating Junction and Storage
Te mp e ra ture Ra ng e
Tc= 2 5 OC
IDM
E AS
PD
TJ,TSTG
48 48
990
175 52
1.4 0.42
-55 to +150
A
mJ
W
OC
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
Note : 1. Maximum DC current limited by the package
RθJC
0.7
RθJA 62.5
2.4 OC/W
100 OC/W
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.A July 2010
Page.1




LUL

LUP12N65 Datasheet Preview

LUP12N65 Datasheet

650V N-Channel Enhancement Mode MOSFET

No Preview Available !

LUP12N65 / LUF12N65
650V N-Channel Enhancement Mode MOSFET
Parameter
Static
Symbol
Te s t C o nd i ti o n
Drain-Source Breakdown Voltag e
Gate Threshold Voltage
Drain-Source On-State
Resistance
Zero Gate Voltage Drain
C urre nt
Gate Body Leakage
Dynamic
B V DSS
V GS(th)
R D S ( o n)
I DSS
I GSS
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
VGS= 10V, I D= 6.0A
VDS=650V, VGS=0V
VGS=+30V, VDS=0V
To ta l Ga te C ha rg e
Gate-Source Charge
Gate-Drain Charge
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Input Capacitance
Output Capacitance
Reverse Tra nsfer
C a p a c i ta nc e
Source-Drain Diode
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
C iss
C oss
C rss
V DS=520V, ID=12A ,
V GS= 1 0 V
VDD=325V, ID =12A
V GS=1 0 V, RG=25
VDS=25V, VGS=0V
f=1.0MHZ
Max. Diode Forward Current
IS
-
Max.Pulsed Source Current
I SM
-
Diode Forward Voltage
V SD
IS=12A , V GS=0V
Re ve rse Re co ve ry Ti me
Reverse Recovery Charge
t rr
Q rr
V GS=0V, IF=12A
d i /d t=1 0 0 A /us
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Mi n. Typ . Ma x. Uni ts
650 -
-
2.0 - 4.0
- 0.66 0.8
V
V
- - 10 uA
- - +100 nΑ
-
46.8
62
- 9.2 - nC
- 14.6 -
- 16.2 24
- 26.8 42
ns
- 56 98
-
24.6
38
- 1800 2450
- 145 195 p F
- 16 22
- - 12 A
- - 48 A
- - 1.4 V
- 450 - ns
- 5.0 - uC
REV.A July 2010
Page.2


Part Number LUP12N65
Description 650V N-Channel Enhancement Mode MOSFET
Maker LUL
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