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LUP12N65 - 650V N-Channel Enhancement Mode MOSFET

General Description

These enhancement mode power filed effect transistors havebeen advanced technology design to provide low on-state resistance, high avalanche energy.

These devices are well suited for popular AC-DC applications, active power factor correction, ballasts based on half-bridge topology.

Key Features

  • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A.
  • Low On-state Resistance.
  • Fast Switching.
  • Low Gate Charge.
  • Fully Characterized Avalanche Voltage and Current Marking and Order Information TYPE LUP12N65 LUF12N65.

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Datasheet Details

Part number LUP12N65
Manufacturer LUL
File Size 175.16 KB
Description 650V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LUP12N65 Datasheet

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LUP12N65 / LUF12N65 650V N-Channel Enhancement Mode MOSFET Product General Description These enhancement mode power filed effect transistors havebeen advanced technology design to provide low on-state resistance, high avalanche energy. These devices are well suited for popular AC-DC applications, active power factor correction, ballasts based on half-bridge topology. Features 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.