LUP12N65 - 650V N-Channel Enhancement Mode MOSFET

LUP12N65 Product details

Description

These enhancement mode power filed effect transistors havebeen advanced technology design to provide low on-state resistance, high avalanche energy.These devices are well suited for popular AC-DC applications, active power factor correction, ballasts based on half-bridge topology.

Features

12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A.
Low On-state Resistance.
Fast Switching.
Low Gate Charge.
Fully Characterized Avalanche Voltage and Current Marking and Order Information TYPE LUP12N65 LUF12N65 MARKING P12N65 F12N65 PACKAGE TO-220 TO-220F PACKING 50.

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Datasheet Details

Part number: LUP12N65
Manufacturer: LUL
File Size: 175.16 KB
Datasheet: LUP12N65-LUL.pdf
Description: 650V N-Channel Enhancement Mode MOSFET

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650V N-Channel Enhancement Mode MOSFET LUL

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