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2SA1930 - SILICON PNP TRANSISTOR

Features

  • High fT, complementary pair with 2SC5171(3DA5171). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IB PC(Ta=25℃) PC(Tc=25℃) Tj Tstg -180 -180 -5.0 -2.0 -1.0 2.0 20 150 -55～150 V V V A A W W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob IC=-10mA VCB=-180V VEB=-5.0V VCE=-5.0V VCE=-5.0V IC=-1.0A VCE=-5.0V VCE=-5.0V VCB=-10V IB=0 IE=0 IC=0 IC=-100mA IC=-1.0A IB=-100.

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Datasheet Details

Part number 2SA1930
Manufacturer LZG
File Size 328.83 KB
Description SILICON PNP TRANSISTOR
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Full PDF Text Transcription

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2SA1930(3CA1930) PNP /SILICON PNP TRANSISTOR :。 Purpose: General power and driver stage amplifier applications. ：， 2SC5171(3DA5171)。 Features: High fT, complementary pair with 2SC5171(3DA5171). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IB PC(Ta=25℃) PC(Tc=25℃) Tj Tstg -180 -180 -5.0 -2.0 -1.0 2.0 20 150 -55～150 V V V A A W W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob IC=-10mA VCB=-180V VEB=-5.0V VCE=-5.0V VCE=-5.0V IC=-1.0A VCE=-5.0V VCE=-5.0V VCB=-10V IB=0 IE=0 IC=0 IC=-100mA IC=-1.0A IB=-100mA IC=-1.0A IC=-300mA IE=0 f=1.0MHz -180 -5.0 -5.0 320 -0.24 -0.68 200 26 -1.0 -1.5 V μA μA 100 50 V V MHz pF http://www.lzg.so http://www.
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