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2SB561 - SILICON PNP TRANSISTOR

Features

  • Complementary pair with 2SD467(3DG467). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -25 V VCEO -20 V VEBO -5.0 V IC -0.7 A ICM -1.0 A PC 0.5 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE fT Cob IC=-10μA IC=-1.0mA IE=-10μA VCB=-20V VEB=-4V VCE=-1.0V IC=-0.5A VCE=-1.0V VCE=-1.0V VCB=-10V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-0.15A IB=-0.05A IC=-0.15A IC=-0.15A f=1.0MHz Min -2.

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Datasheet Details

Part number 2SB561
Manufacturer LZG
File Size 184.13 KB
Description SILICON PNP TRANSISTOR
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Full PDF Text Transcription

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2SB561(3CG561) PNP /SILICON PNP TRANSISTOR :。 Purpose: Low frequency power amplifier. : 2SD467(3DG467)。 Features: Complementary pair with 2SD467(3DG467). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -25 V VCEO -20 V VEBO -5.0 V IC -0.7 A ICM -1.0 A PC 0.5 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE fT Cob IC=-10μA IC=-1.0mA IE=-10μA VCB=-20V VEB=-4V VCE=-1.0V IC=-0.5A VCE=-1.0V VCE=-1.0V VCB=-10V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-0.15A IB=-0.05A IC=-0.15A IC=-0.15A f=1.0MHz Min -25 -20 -5.0 85 Rating Typ -0.2 -0.75 350 20 Max -1.0 -1.0 240 -0.5 -1.0 Unit V V V μA μA V V MHz pF hFE /hFE Classifications: B:85～170 C:120～240 http://www.lzg.
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