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3CA1412 - SILICON PNP TRANSISTOR

Features

  • Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118(3DG2118). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -20 V VEBO -6.0 V IC -5 A ICM -10 A PC 1.0 W.
  • PC (Tc=25℃) 10 W Tj 150 ℃ Tstg -55～150.
  • mounted On40×40×0.7mm ceramic board.
  • 40×40×0.7mm 。 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO IC=-50μA IE=0 VCEO IC=-1.0mA IB=0 VEBO IE=-50μA IC=0 ICBO VCB=-20V IE=0 IEBO VEB=-5.0V IC.

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Datasheet Details

Part number 3CA1412
Manufacturer LZG
File Size 240.16 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CA1412 Datasheet
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Full PDF Text Transcription

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2SB1412(3CA1412) PNP /SILICON PNP TRANSISTOR ：。 Purpose: Medium power amplifier applications. :,， 2SD2118(3DG2118)。 Features: Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118(3DG2118). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -20 V VEBO -6.0 V IC -5 A ICM -10 A PC 1.0 W *PC (Tc=25℃) 10 W Tj 150 ℃ Tstg -55～150 *mounted On40×40×0.7mm ceramic board. * 40×40×0.7mm 。 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO IC=-50μA IE=0 VCEO IC=-1.0mA IB=0 VEBO IE=-50μA IC=0 ICBO VCB=-20V IE=0 IEBO VEB=-5.0V IC=0 hFE VCE=-2.0V IC=-0.5A V* CE(sat) IC=-4.0A IB=-0.1A fT VCE=-6.0V IC=-50mA f=30MHz Cob VCB=-20V IE=0 *:measured using pulse current. *: f=1.0MHz Min -30 -20 -6.
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