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3CG1198K - SILICON PNP TRANSISTOR

Key Features

  • High breakdown,low VCE(sat),complements the 2SD1782K(3DG1782K). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -80 V VCEO -80 V VEBO -5 V IC -500 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-50μA IC=-2mA IE=-50μA VCB=-50V VEB=-4V VCE=-3V IC=-500mA VCE=-10V IE=50mA VCB=-10V IE=0 IC=-100mA IB=-50mA f=100MHz f=1MHz Min -80 -80 -5 120 Rating Typ -0.2 180 11.

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Datasheet Details

Part number 3CG1198K
Manufacturer LZG
File Size 262.52 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG1198K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1198K(3CG1198K) PNP /SILICON PNP TRANSISTOR ：。 Purpose: Medium power amplifier applications. :，, 2SD1782K(3DG1782K)。 Features: High breakdown,low VCE(sat),complements the 2SD1782K(3DG1782K). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -80 V VCEO -80 V VEBO -5 V IC -500 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-50μA IC=-2mA IE=-50μA VCB=-50V VEB=-4V VCE=-3V IC=-500mA VCE=-10V IE=50mA VCB=-10V IE=0 IC=-100mA IB=-50mA f=100MHz f=1MHz Min -80 -80 -5 120 Rating Typ -0.2 180 11 Max -0.5 -0.5 390 -0.