3CG1300 - SILION PNP TRANSISTOR

Datasheet Details

High DC current gain, excellent hFE linearity, low saturation voltage. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -20 V VCEO -10 V VEBO -6.0 V IC -2.0 A ICP -5.0 A IB -2.0 A PC 750 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob IC=-10mA IB=0 IE=-1.0mA IC=0 VCB=-20V IE=0 VEB=-6.0V IC=0 VCE=-1.0V IC=-0.5A VCE=-1.0V IC=-4.0A IC=-2.0A IB=-50mA IC.

📁 3CG1300 Similar Datasheet

3CG1346 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
3CG1980 - PNP Silicon Transistor (Kodenshi)
3CG3906 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG5401 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG5610 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
3CG640 - PNP Silicon High Frequency Middle Power Transistor (Qunli Electric)
3CG708 - SILICON PNP TRANSISTOR (BLUE ROCKET)
3CG751 - TO-92MOD Plastic-Encapsulate Transistors (TY Semiconductor)

Other Datasheets by LZG

Published: Aug 8, 2017 |