3CG1365 Datasheet SILICON PNP TRANSISTOR

Manufacturer: LZG

Datasheet Details

Low collector to emitter saturation voltage, excellent linearity of DC forward current Gain, high collector current, high gain band width product. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号数值单位 Symbol Rating Unit VCBO -25 V VCEO -20 V VEBO -4.0 V IC -700 mA ICM -1.0 A PC 150 mW Tj 150 ℃ Tstg -55～150 ℃ 电性能参数/Electrical characteristics(Ta=25℃) 参数符号 Symbol 测试条件 Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT IC=-10μA IC=-100μA IE=-10μA VCB=-25V VEB=-2.0V VCE=-4.