3CG1376 - SILICON PNP TRANSISTOR

Product Overview

LZG

Part number	3CG1376
Manufacturer	LZG
File Size	292.90 KB
Description	SILICON PNP TRANSISTOR
Datasheet	3CG1376 Datasheet
Additional preview pages of the 3CG1376 datasheet.

High breakdown voltage, good hFE linearity, complementary to 2SC3478(3DG3478). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -200 V VCEO -180 V VEBO -5.0 V IC -100 mA ICP -200 mA IB -20 mA PC 750 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob ton toff VCB=-200V IE=0 VEB=-4.0V IC=0 VCE=-10V IC=-50mA IC=-50mA VCE=-10V VCE=-10V IC=-10mA IB=-5.0mA IB=-5.0mA IC=-10mA.

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Published: Aug 8, 2017 |