* High breakdown voltage, good hFE linearity, complementary to 2SC3478(3DG3478). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -200 V VCEO -180 V VEBO -5.0 V IC -100 mA ICP -200 mA IB -20 mA PC 750 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃
3CG1376
LZG
292.90 KB
Silicon pnp transistor.
2SA1376(3CG1376) PNP /SILICON PNP TRANSISTOR : 。 Purpose: General purpose amplifier applications requiring high breakdown voltages. : ，, 2SC3478(3D.
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