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3CG1376 - SILICON PNP TRANSISTOR

Features

  • High breakdown voltage, good hFE linearity, complementary to 2SC3478(3DG3478). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -200 V VCEO -180 V VEBO -5.0 V IC -100 mA ICP -200 mA IB -20 mA PC 750 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob ton toff VCB=-200V IE=0 VEB=-4.0V IC=0 VCE=-10V IC=-50mA IC=-50mA VCE=-10V VCE=-10V IC=-10mA IB=-5.0mA IB=-5.0mA IC=-10mA.

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Datasheet Details

Part number 3CG1376
Manufacturer LZG
File Size 292.90 KB
Description SILICON PNP TRANSISTOR
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Full PDF Text Transcription

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2SA1376(3CG1376) PNP /SILICON PNP TRANSISTOR : 。 Purpose: General purpose amplifier applications requiring high breakdown voltages. : ，, 2SC3478(3DG3478)。 Features: High breakdown voltage, good hFE linearity, complementary to 2SC3478(3DG3478). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -200 V VCEO -180 V VEBO -5.0 V IC -100 mA ICP -200 mA IB -20 mA PC 750 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob ton toff VCB=-200V IE=0 VEB=-4.0V IC=0 VCE=-10V IC=-50mA IC=-50mA VCE=-10V VCE=-10V IC=-10mA IB=-5.0mA IB=-5.0mA IC=-10mA IE=10mA VCB=-30V IF=0 f=1.0MHz IC=-10mA VCC=-10V IB1=-IB2=-1.0mA Min 135 -600 80 Rating Typ -0.2 -0.
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