3CG1955
3CG1955 is SILICON PNP TRANSISTOR manufactured by LZG.
Features
: Low saturation voltage, large collector current.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号
数值
单位
Symbol
Rating
Unit
VCBO -15 V
VCEO -12 V
VEBO
-5.0
-400 m A
IB -50 m A
PC 100 m W
Tj 150 ℃
Tstg
-55～150
℃
电性能参数/Electrical characteristics(Ta=25℃)
参数符号
Symbol
测试条件
Test condition
ICBO IEBO h FE VCE(sat)(1) VCE(sat)(2) VBE(sat) f T Cob
Ron
VCB=-15V VEB=-5.0V VCE=-2.0V IC=-10m A IC=-200m A IC=-200m A VCE=-2.0V VCB=-10V
IE=0
IE=0 IC=0 IC=-10m A IB=-0.5m A IB=-10m A IB=-10m A IC=-10m A f=1.0MHz
IB=-1.0m A Vin=-1.0Vrms f=1KHZ ton
Tstg IB1=-IB2=5.0m A tf h FE 分档/h FE Classifications： h FE 分档 h FEClassifications h FE 范围 h FE Range
印章
Marking
A 300～600
HGAA
最小值
Min...
