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3CG1981M - SILICON PNP TRANSISTOR

Key Features

  • High hFE, complementary pair with 2SC5344S(3DG5344M). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5.0 V IC -800 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-500μA IC=-1.0mA IE=-50μA VCB=-35V VEB=-5.0V VCE=-1.0V IC=-500mA VCE=-5.0V VCB=-10V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-100mA IB=-20mA IC=-10mA f=1.0MHz h /FE(1) hFE(1) classi.

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Datasheet Details

Part number 3CG1981M
Manufacturer LZG
File Size 180.92 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG1981M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA1981S(3CG1981M) PNP /SILICON PNP TRANSISTOR :。 Purpose: Audio power amplifier application. :， 2SC5344S(3DG5344M)。 Features: High hFE, complementary pair with 2SC5344S(3DG5344M). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5.0 V IC -800 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-500μA IC=-1.0mA IE=-50μA VCB=-35V VEB=-5.0V VCE=-1.0V IC=-500mA VCE=-5.0V VCB=-10V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-100mA IB=-20mA IC=-10mA f=1.0MHz h /FE(1) hFE(1) classifications： hFE(1) hFE(1) Classifications hFE(1) hFE(1) Range Marking O 100～200 HEAO Min -35 -30 -5.