* Excellent hFE linearity, complementary pair with 2SC1959M(3DG1959M). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5.0 V IC -500 mA IB -100 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol ICBO IEBO hFE(1)
3CG562M
LZG
253.53 KB
Silicon pnp transistor.
2SA562M(3CG562M) PNP /SILICON PNP TRANSISTOR :，。 Purpose: Audio frequency low power amplifier, driver stage amplifier, switching applications. : hF.
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