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3CG719 - SILICON PNP TRANSISTOR

Key Features

  • Complementary pair with 2SC1317(3DG1317). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -5.0 V IC -500 mA ICP -1.0 A PC 625 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test Condition IC=-10μA IC=-10mA IE=-10μA VCB=-20V VCE=-10V VCE=-10V IC=-300mA IC=-300mA VCE=-10V VCB=-10V IE=0 IB=0 IC=0 IE=0 IC=-150mA IC=-500mA IB=-30mA IB=-30mA IC=-50mA IE=0 f=1.

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Datasheet Details

Part number 3CG719
Manufacturer LZG
File Size 293.45 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG719 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA719(3CG719) PNP /SILICON PNP TRANSISTOR :/Purpose:AF output amplifier and driver. : 2SC1317(3DG1317)/Features:Complementary pair with 2SC1317(3DG1317). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -5.0 V IC -500 mA ICP -1.0 A PC 625 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test Condition IC=-10μA IC=-10mA IE=-10μA VCB=-20V VCE=-10V VCE=-10V IC=-300mA IC=-300mA VCE=-10V VCB=-10V IE=0 IB=0 IC=0 IE=0 IC=-150mA IC=-500mA IB=-30mA IB=-30mA IC=-50mA IE=0 f=1.0MHz Min -30 -25 -5.0 85 40 Rating Typ -0.35 -1.1 200 6.0 Max -0.1 340 -0.6 -1.