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3CG772M - SILICON PNP TRANSISTOR

Datasheet Summary

Features

  • Low saturation voltage, excellent hFE linearity and high hFE. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -40 V VCEO -30 V VEBO -5 V IC -3 A ICP -7 A PC 0.35 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Min Rating Typ Max Unit BVCBO IC=-100μA IE=0 -40 V BVCEO IC=-1mA IB=0 -30 V BVEBO IE=-100μA IC=0 -5 V ICBO VCB=-30V IE=0 -1 μA ICEO VCE=-30V IB=0 -1 μA IEBO VEB=-3V IC=0 -1 μA.
  • h.

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Datasheet preview – 3CG772M

Datasheet Details

Part number 3CG772M
Manufacturer LZG
File Size 215.24 KB
Description SILICON PNP TRANSISTOR
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Full PDF Text Transcription

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2SB772M(3CG772M) PNP /SILICON PNP TRANSISTOR :,,。 Purpose: Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. :, hFE /Features: Low saturation voltage, excellent hFE linearity and high hFE. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -40 V VCEO -30 V VEBO -5 V IC -3 A ICP -7 A PC 0.
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