* Adoption of FBET,MBIT processes, low saturation voltage, large current capacity and wide ASO. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -6.0 V IC -2.0 A ICP -5.0 A PC 0.75 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃)
3CG926
LZG
214.26 KB
Silicon pnp transistor.
2SB926(3CG926) PNP /SILICON PNP TRANSISTOR :，，。 Purpose: Power supplies, relay drivers, lamp drivers, electrical equipment. : FBET MBIT ,,。 Featur.
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