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3CG926 - SILICON PNP TRANSISTOR

Features

  • Adoption of FBET,MBIT processes, low saturation voltage, large current capacity and wide ASO. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -6.0 V IC -2.0 A ICP -5.0 A PC 0.75 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test Condition IC=-10μA IC=-1.0mA IE=-10μA VCB=-20V VEB=-4.0V VCE=-2.0V VCE=-2.0V IC=-1.5A IC=-1.5A VCE=-10V VCB=-10V IE=0.

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Datasheet Details

Part number 3CG926
Manufacturer LZG
File Size 214.26 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG926 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB926(3CG926) PNP /SILICON PNP TRANSISTOR :，，。 Purpose: Power supplies, relay drivers, lamp drivers, electrical equipment. : FBET MBIT ,,。 Features: Adoption of FBET,MBIT processes, low saturation voltage, large current capacity and wide ASO. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -6.0 V IC -2.0 A ICP -5.0 A PC 0.75 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test Condition IC=-10μA IC=-1.0mA IE=-10μA VCB=-20V VEB=-4.0V VCE=-2.0V VCE=-2.0V IC=-1.5A IC=-1.5A VCE=-10V VCB=-10V IE=0 IB=0 IC=0 IE=0 IC=0 IC=-100mA IC=-1.5A(pulse) IB=-75mA(pulse) IB=-75mA IC=-50mA f=1.
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