• Part: 3CG926
  • Description: SILICON PNP TRANSISTOR
  • Category: Transistor
  • Manufacturer: LZG
  • Size: 214.26 KB
Download 3CG926 Datasheet PDF
LZG
3CG926
Features : Adoption of FBET,MBIT processes, low saturation voltage, large current capacity and wide ASO. 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -6.0 -2.0 -5.0 Tj 150 ℃ Tstg -55~150 ℃ 电性能参数/Electrical Characteristics(Ta=25℃) 参数符号 Symbol VCBO VCEO VEBO ICBO IEBO h FE(1) h FE(2) VCE(sat) VBE(sat) f T Cob 测试条件 Test Condition IC=-10μA IC=-1.0m A IE=-10μA VCB=-20V VEB=-4.0V VCE=-2.0V VCE=-2.0V IC=-1.5A IC=-1.5A VCE=-10V VCB=-10V IE=0 IB=0 IC=0 IE=0 IC=0 IC=-100m A IC=-1.5A(pulse) IB=-75m A(pulse) IB=-75m A IC=-50m A...