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3CG937 - SILICON PNP TRANSISTOR

Features

  • Complementary pair with 2SC2021(3DG2021). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -50 V VCEO -40 V VEBO -5.0 V IC -100 mA PC 300 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-50μA IC=-1.0mA IE=-50μA VCB=-30V VEB=-4.0V VCE=-6.0V IC=-50mA VCE=-12V VCB=-12V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-1.0mA IB=-5.0mA IC=-2.0mA f=1.0MHz Min -50 -40 -5.0 120 Rating Typ -0.1.

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Datasheet Details

Part number 3CG937
Manufacturer LZG
File Size 361.68 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG937 Datasheet

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Other Datasheets by LZG

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3CG926 SILICON PNP TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA937(3CG937) PNP /SILICON PNP TRANSISTOR :,,,,,。 Purpose: General small-signal amplifier, preamplifiers, equalizer amplifiers, RF amplifiers and oscillators, medium-speed switching. : 2SC2021(3DG2021)/Features: Complementary pair with 2SC2021(3DG2021). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -50 V VCEO -40 V VEBO -5.0 V IC -100 mA PC 300 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-50μA IC=-1.0mA IE=-50μA VCB=-30V VEB=-4.0V VCE=-6.0V IC=-50mA VCE=-12V VCB=-12V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-1.0mA IB=-5.0mA IC=-2.0mA f=1.0MHz Min -50 -40 -5.0 120 Rating Typ -0.1 140 4.0 Max -0.5 -0.5 560 -0.5 5.
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