Datasheet4U Logo Datasheet4U.com

3CG970 - SILICON PNP TRANSISTOR

Datasheet Summary

Features

  • Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -120 V VCEO -120 V VEBO -5.0 V IC -100 mA IE 100 mA PC 300 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition VCEO ICBO IEBO hFE VCE(sat) VBE fT Cob IC=-1.0mA VCB=-120V VEB=-5.0V VCE=-6.0V IC=-10mA VCE=-6.0V VCE=-6.0V VCB=-10V IB=0 IE=0 IC=0 IC=-2.0mA IB=-1.0mA IC=-2.0mA IC=-1.0mA IE=0 f=1.0MHz Min -120 200 Rati.

📥 Download Datasheet

Datasheet preview – 3CG970

Datasheet Details

Part number 3CG970
Manufacturer LZG
File Size 234.77 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG970 Datasheet
Additional preview pages of the 3CG970 datasheet.

📁 Similar Datasheet

  • 3CG9012 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
  • 3CG9015 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
  • 3CG9015 - SILICON PNP TRANSISTOR (BLUE ROCKET ELECTRONICS)
  • 3CG94T - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • 3CG1346 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • 3CG1980 - PNP Silicon Transistor (Kodenshi)
  • 3CG3906 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
  • 3CG5401 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
  • 3CG5610 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • 3CG640 - PNP Silicon High Frequency Middle Power Transistor (Qunli Electric)
Other Datasheets by LZG
  • 3CG926 - SILICON PNP TRANSISTOR
  • 3CG937 - SILICON PNP TRANSISTOR
  • 3CG950 - SILICON PNP TRANSISTOR
  • 3CG952 - SILICON PNP TRANSISTOR
  • 3CG953 - SILICON PNP TRANSISTOR
  • 3CG953M - SILICON PNP TRANSISTOR
  • 3CG966 - SILICON PNP TRANSISTOR
  • 3CG1013 - SILICON PNP TRANSISTOR

Full PDF Text Transcription

Click to expand full text
2SA970(3CG970) PNP /SILICON PNP TRANSISTOR : 。 Purpose: Low noise audio amplifier applications. : ,,。 Features: Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -120 V VCEO -120 V VEBO -5.0 V IC -100 mA IE 100 mA PC 300 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition VCEO ICBO IEBO hFE VCE(sat) VBE fT Cob IC=-1.0mA VCB=-120V VEB=-5.0V VCE=-6.0V IC=-10mA VCE=-6.0V VCE=-6.0V VCB=-10V IB=0 IE=0 IC=0 IC=-2.0mA IB=-1.0mA IC=-2.0mA IC=-1.0mA IE=0 f=1.0MHz Min -120 200 Rating Typ -0.65 100 4.0 VCE=-6.0V IC=-0.1mA f=10Hz Rg=10KΩ NF VCE=-6.0V IC=-0.1mA f=1.0KHz Rg=10KΩ VCE=-6.0V IC=-0.1mA f=1.0KHz Rg=100Ω 3.
Published: |