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2N2222(3DG2222)
NPN /SILICON NPN TRANSISTOR
:。
Purpose: General purpose amplifier.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO 60 V
VCEO 30 V
VEBO 5.0 V
IC 600 mA
PC 625 mW
Tj 150 ℃
Tstg
-55~150
℃
/Electrical characteristics(Ta=25℃)
Symbol
VCBO VCEO VEBO ICBO IEBO hFE VCE(sat)(1) VCE(sat)(2) VBE(sat)(1) VBE(sat)(2) fT Cob
Ton
Toff
Test condition
IC=10μA
IE=0
IE=10mA
IB=0
IE=10μA
IC=0
VCB=50V
IE=0
VEB=5.0V
IC=0
VCE=10V
IC=150mA
IC=150mA
IB=15mA
IC=500mA
IB=50mA
IC=150mA
IB=15mA
IC=500mA
IB=50mA
VCE=20V IC=20mA f=100MHz
VCB=10V IE=0
f=1.0MHz
VCC=30V
VBE=0.5V
IC=150mA
IB1=15mA
VCC=30V IC=150mA IB1=IB2=15mA
Min
60 30 5.0
100
250
Rating
Typ
Max
0.01 0.1 300 0.4 1.6 1.3 2.6
8.