Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VDSS 600 V
ID(Tc=25℃)
2.0 A
ID(Tc=100℃)
1.3 A
IDM 6.0 A
VGSS
±30
V
EAS 120 mJ
EAR 5.4 mJ
IAR 2.0 A
PD(Tc=25℃)
54 W
TJ,TSTG
-55 to 150 ℃
/Electrical Characteristics(Ta=25℃)
Symbol
Test Conditions
BVDSS
VGS=0V
ID=250μA
IDSS
VDS=600V VDS=480V
VGS=0V TC=125℃
IGSS VGS=±30V VDS=0V
VGS(th)
VDS=VGS
ID=250μA
RDS(on)
VGS=10V
ID=1.0A
gFS
VDS=40V
ID=1.0A
VSD
VGS.
Full PDF Text Transcription for BR2N60 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BR2N60. For precise diagrams, and layout, please refer to the original PDF.
BR2N60(CS2N60) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,...
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ciency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 2.0 A ID(Tc=100℃) 1.3 A IDM 6.0 A VGSS ±30 V EAS 120 mJ EAR 5.4 mJ IAR 2.0 A PD(Tc=25℃) 54 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=600V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=1.0A gFS VDS=40V ID=1.0A VSD VGS=0V IS=2.0A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=300V ID=2.
BR2N60 Datasheet
