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CS640F - N-CHANNEL MOSFET

Datasheet Summary

Features

  • Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 200 V ID(Tc=25℃) 18 A ID(Tc=100℃) 11.4 A IDM 72 A VGSS ±30 V EAS 250 mJ EAR 13.9 mJ IAR 18 A PD(Tc=25℃) 43 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=200V VDS=160V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA gFS VDS=40V ID=9.0A RDS(on) VGS=10V ID=9.0A VSD V.

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Datasheet Details

Part number CS640F
Manufacturer LZG
File Size 192.46 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet CS640F Datasheet
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Full PDF Text Transcription

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IRFS640(CS640F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 200 V ID(Tc=25℃) 18 A ID(Tc=100℃) 11.4 A IDM 72 A VGSS ±30 V EAS 250 mJ EAR 13.9 mJ IAR 18 A PD(Tc=25℃) 43 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=200V VDS=160V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA gFS VDS=40V ID=9.0A RDS(on) VGS=10V ID=9.0A VSD VGS=0V IS=18A Ciss Coss VDS=25V VGS=0V f=1.
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