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IRFS840 - N-Channel MOSFET

Features

  • Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 500 V ID(Tc=25℃) 8.0 A ID(Tc=100℃) 5.1 A IDM 32 A VGSS ±30 V IAR 8 A EAS 320 mJ EAR 13.4 mJ PD(Tc=25℃) 44 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=500V VDS=400V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=4.0A gFS VDS=40V ID=4.0A VSD VGS.

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Datasheet Details

Part number IRFS840
Manufacturer LZG
File Size 181.86 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFS840 Datasheet
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Full PDF Text Transcription

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IRFS840(CS840F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 500 V ID(Tc=25℃) 8.0 A ID(Tc=100℃) 5.1 A IDM 32 A VGSS ±30 V IAR 8 A EAS 320 mJ EAR 13.4 mJ PD(Tc=25℃) 44 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=500V VDS=400V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=4.0A gFS VDS=40V ID=4.0A VSD VGS=0V IS=8A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=250V ID=8A RG=25Ω tf Min 500 2.
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