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Leshan Radio Company

L2N7002LT1G Datasheet Preview

L2N7002LT1G Datasheet

Small Signal MOSFET

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L2N7002LT1G
S-L2N7002LT1G
Small Signal MOSFET
115 mAmps, 60 Volts N–Channel SOT-23
1. FEATURES
We declare that the material of product compliance with
RoHS requirements and Halogen Free.
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
ESD Protected:1000V
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2N7002LT1G
702 3000/Tape&Reel
L2N7002LT3G
702 10000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current
– Continuous TC = 25°C
TC = 100°C
– Pulsed (Note 1)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp50μs)
Symbol
VDSS
VDGR
ID
IDM
VGS
VGSM
Limits
60
60
±115
±75
±800
Unit
Vdc
Vdc
mAdc
±20 Vdc
±40 Vdc
4. THERMAL CHARACTERISTICS
Parameter
Symbol Limits Unit
Total Device Dissipation,
FR−5 Board (Note 2) @ TA = 25ºC
PD
225 mW
Derate above 25ºC
1.8 mW/ºC
Thermal Resistance,
RΘJA
556 ºC/W
Junction–to–Ambient(Note 2)
Junction and Storage temperature
TJ,Tstg −55+150
1. Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
2. FR–5 = 1.0×0.75×0.062 in.
ºC
SOT23(TO-236)
Leshan Radio Company, LTD.
Rev.C Mar 2018
1/6




Leshan Radio Company

L2N7002LT1G Datasheet Preview

L2N7002LT1G Datasheet

Small Signal MOSFET

No Preview Available !

L2N7002LT1G, S-L2N7002LT1G
Small Signal MOSFET
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Characteristic
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10μAdc)
Symbol
VBRDSS
Zero Gate Voltage Drain Current TJ = 25°C
(VGS = 0, VDS = 60 Vdc)
TJ = 125°C
IDSS
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = - 20 Vdc)
IGSSF
IGSSR
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250μAdc)
VGS(th)
On–State Drain Current
(VDS 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
ID(on)
VDS(on)
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
RDS(on)
(VGS = 10 Vdc, ID = 500 mAdc) TC = 25°C
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
TC = 125°C
Forward Transconductance
(VDS2.0 VDS(on), ID = 200 mAdc)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Ciss
Output Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Coss
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Crss
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
(VDD = 25 Vdc , ID =500
mAdc, RG = 25Ω,RL = 50
Ω,Vgen = 10 V)
td(on)
td(off)
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 115 mAdc, VGS = 0 V)
VSD
Source Current Continuous (Body Diode)
IS
Source Current Pulsed
ISM
3.Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
Min.
60
-
-
-
-
1.0
500
-
-
-
-
-
-
80
-
-
-
-
-
-
-
-
Typ. Max.
--
- 1.0
- 500
- 1.0
- -1.0
Unit
Vdc
μAdc
μAdc
μAdc
Vdc
1.6 2.0
mA
--
Vdc
- 3.75
- 0.375
Ohms
1.4 7.5
- 13.5
1.8 7.5
- 13.5
mmhos
--
17 50
10 25
2.5 5.0
pF
pF
pF
ns
7 20
11 40
Vdc
- -1.5
-
-115
mAdc
-
-800
mAdc
Leshan Radio Company, LTD.
Rev.C Mar 2018
2/6


Part Number L2N7002LT1G
Description Small Signal MOSFET
Maker Leshan Radio Company
Total Page 6 Pages
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