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Leshan Radio Company

L2SA1037AKQLT3G Datasheet Preview

L2SA1037AKQLT3G Datasheet

General Purpose Transistors

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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
Features
z We declare that the material of product compliance with RoHS requirements.
zS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SA1037AKQLT1G Series
S-L2SA1037AKQLT1G Series
ORDERING INFORMATION
3
Device
L2SA1037AKQLT1G
S-L2SA1037AKQLT1G
L2SA1037AKQLT3G
S-L2SA1037AKQLT3G
Package
SOT23
SOT23
Shipping
3000/Tape & Reel
10000/Tape & Reel
1
2
SOT– 23
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
V CEO
V CBO
–50
–60
V
V
Emitter–Base Voltage
V EBO
–6.0
V
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
IC
PC
Tj
T stg
–150
mAdc
0.2 W
150 °C
-55 ~+150 °C
DEVICE MARKING
1
BASE
L2SA1037AKQLT1G =FQ L2SA1037AKSLT1G=G3F L2SA1037AKRLT1G=FR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = –1 mA)
Emitter–Base Breakdown Voltage
(IE = – 50 µA)
Collector–Base Breakdown Voltage
(IC = – 50 µA)
Collector Cutoff Current
(VCB = – 60 V)
Emitter cutoff current
(VEB = – 6 V)
Collector-emitter saturation voltage
(IC/ IB = – 50 mA / – 5m A)
DC current transfer ratio
(V CE = – 6 V, I C= –1mA)
Transition frequency
(V CE = – 12 V, I E= 2mA, f=30MHz )
Output capacitance
(V CB = – 12 V, I E= 0A, f =1MHz )
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
V CE(sat)
h FE
fT
C ob
Min
– 50
–6
– 60
120
Typ Max Unit
— —V
— —V
— —V
— – 0.1 µA
— – 0.1 µA
— -0.5 V
–– 560 ––
140 –– MHz
4.0 5.0 pF
3
COLLECTOR
2
EMITTER
h FE values are classified as follows:
*Q
R
hFE
120~270
180~390
S
270~560
Rev.O 1/4




Leshan Radio Company

L2SA1037AKQLT3G Datasheet Preview

L2SA1037AKQLT3G Datasheet

General Purpose Transistors

No Preview Available !

Fig.1 Grounded emitter propagation characteristics
–50
T A = 100°C
–20 25°C
– 40°C
–10
–50
V = –10 V
CE
–2
–1
–0.5
–0.2
–0.1
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6
V BE , BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded emitter output characteristics( )
–100
T A = 25°C
500
–80 450
400
350
300
–60
–40
–20
–250
–200
–150
–100
–50 µA
I B =0
0
0
–1 –2
–3
–4 –5
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Fig.5 DC current gain vs. collector current ( )
500
T A = 100°C
25°C
–40°C
200
100
50
–0.2 –0.5 –1 –2
VCE= – 6V
–5 –10 –20
–50 –100
I C, COLLECTOR CURRENT (mA)
LESHAN RADIO COMPANY, LTD.
L2SA1037AKQLT1G Series
S-L2SA1037AKQLT1G Series
Fig.2 Grounded emitter output characteristics( )
–10
T A = 25°C
–35.0
–31.5
–8 –28.0
–24.5
–21.0
–6
–17.5
–14.0
–4
–10.5
–7.0
–2
–3.5µA
0 I B =0
0
–0.4 –0.8
–1.2
–1.6
–2.0
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Fig.4 DC current gain vs. collector current ( )
500
T A = 25°C
VCE= –5 V
–3V
–1V
200
100
50
–0.2 –0.5 –1 –2
–5 –10 –20
I C, COLLECTOR CURRENT (mA)
–50 –100
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
–1
T A = 25°C
–0.5
–0.2
–0.1
–0.05
I C /I B = 50
20
10
–0.2 –0.5 –1 –2
–5 –10 –20
I C, COLLECTOR CURRENT (mA)
–50 –100
Rev.O 2/4


Part Number L2SA1037AKQLT3G
Description General Purpose Transistors
Maker Leshan Radio Company
Total Page 4 Pages
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